Vishay Semiconductor Diodes Division - 1N914TAP

KEY Part #: K6455936

1N914TAP Pricing (USD) [4676071pcs Stock]

  • 1 pcs$0.00791
  • 50,000 pcs$0.00664

Part Number:
1N914TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 300MA DO35. Diodes - General Purpose, Power, Switching 100 Volt 300mA
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N914TAP electronic components. 1N914TAP can be shipped within 24 hours after order. If you have any demands for 1N914TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N914TAP Product Attributes

Part Number : 1N914TAP
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 300MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 10mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 5µA @ 75V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : -65°C ~ 175°C

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