1N4150W-HE3-08 Pricing (USD) [2033073pcs Stock]
- 1 pcs$0.01920
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Part Number:
- 1N4150W-HE3-08
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Special Purpose, Thyristors - SCRs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-08 electronic components. 1N4150W-HE3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-08 Product Attributes
Part Number :
1N4150W-HE3-08
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 50V 200MA SOD123
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
50V
Current - Average Rectified (Io) :
200mA
Voltage - Forward (Vf) (Max) @ If :
1V @ 200mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Current - Reverse Leakage @ Vr :
100nA @ 50V
Capacitance @ Vr, F :
2.5pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
SOD-123
Supplier Device Package :
SOD-123
Operating Temperature - Junction :
-55°C ~ 150°C
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