NTD5C648NLT4G Pricing (USD) [80604pcs Stock]
- 1 pcs$0.48509
- Part Number:
- NTD5C648NLT4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- T6 60V LL DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTD5C648NLT4G electronic components. NTD5C648NLT4G can be shipped within 24 hours after order. If you have any demands for NTD5C648NLT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTD5C648NLT4G Product Attributes
Part Number :
NTD5C648NLT4G
Manufacturer :
ON Semiconductor
Description :
T6 60V LL DPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
22A (Ta), 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
4.4W (Ta), 76W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK (SINGLE GAUGE)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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