Toshiba Semiconductor and Storage - 1SS352,H3F

KEY Part #: K6458215

1SS352,H3F Pricing (USD) [3056256pcs Stock]

  • 1 pcs$0.01277
  • 3,000 pcs$0.01271
  • 6,000 pcs$0.01146
  • 15,000 pcs$0.00997
  • 30,000 pcs$0.00897
  • 75,000 pcs$0.00797
  • 150,000 pcs$0.00664

Part Number:
1SS352,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 80V 100MA SC76-2. Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - Zener - Arrays, Transistors - JFETs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules and Diodes - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 1SS352,H3F electronic components. 1SS352,H3F can be shipped within 24 hours after order. If you have any demands for 1SS352,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS352,H3F Product Attributes

Part Number : 1SS352,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 80V 100MA SC76-2
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 80V
Current - Average Rectified (Io) : 100mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 500nA @ 80V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76A
Supplier Device Package : SC-76-2
Operating Temperature - Junction : 125°C (Max)

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