APT40GP60B2DQ2G Pricing (USD) [7172pcs Stock]
- 1 pcs$6.83085
- 10 pcs$6.21123
- 25 pcs$5.74549
- 100 pcs$5.27967
- 250 pcs$4.81382
- Part Number:
- APT40GP60B2DQ2G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- IGBT 600V 100A 543W TMAX.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Diodes - Rectifiers - Arrays, Thyristors - SCRs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT40GP60B2DQ2G electronic components. APT40GP60B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT40GP60B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT40GP60B2DQ2G Product Attributes
Part Number :
APT40GP60B2DQ2G
Manufacturer :
Microsemi Corporation
Description :
IGBT 600V 100A 543W TMAX
Series :
POWER MOS 7®
Part Status :
Not For New Designs
IGBT Type :
PT
Voltage - Collector Emitter Breakdown (Max) :
600V
Current - Collector (Ic) (Max) :
100A
Current - Collector Pulsed (Icm) :
160A
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 40A
Power - Max :
543W
Switching Energy :
385µJ (on), 350µJ (off)
Input Type :
Standard
Gate Charge :
135nC
Td (on/off) @ 25°C :
20ns/64ns
Test Condition :
400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3 Variant
Supplier Device Package :
-
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