HGTD1N120BNS9A Pricing (USD) [136878pcs Stock]
- 1 pcs$0.27022
- 2,500 pcs$0.26133
- 5,000 pcs$0.24889
- Part Number:
- HGTD1N120BNS9A
- Manufacturer:
- ON Semiconductor
- Detailed description:
- IGBT 1200V 5.3A 60W TO252AA.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor HGTD1N120BNS9A electronic components. HGTD1N120BNS9A can be shipped within 24 hours after order. If you have any demands for HGTD1N120BNS9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTD1N120BNS9A Product Attributes
Part Number :
HGTD1N120BNS9A
Manufacturer :
ON Semiconductor
Description :
IGBT 1200V 5.3A 60W TO252AA
Series :
-
Part Status :
Active
IGBT Type :
NPT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
5.3A
Current - Collector Pulsed (Icm) :
6A
Vce(on) (Max) @ Vge, Ic :
2.9V @ 15V, 1A
Power - Max :
60W
Switching Energy :
70µJ (on), 90µJ (off)
Input Type :
Standard
Gate Charge :
14nC
Td (on/off) @ 25°C :
15ns/67ns
Test Condition :
960V, 1A, 82 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package :
TO-252AA
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