SQJQ900E-T1_GE3 Pricing (USD) [74376pcs Stock]
- 1 pcs$0.52571
- 2,000 pcs$0.44331
- Part Number:
- SQJQ900E-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2 N-CH 40V POWERPAK8X8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQJQ900E-T1_GE3 electronic components. SQJQ900E-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJQ900E-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJQ900E-T1_GE3 Product Attributes
Part Number :
SQJQ900E-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 40V POWERPAK8X8
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5900pF @ 20V
Power - Max :
75W
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® 8 x 8 Dual
Supplier Device Package :
PowerPAK® 8 x 8 Dual
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