TSM60NB041PW C1G Pricing (USD) [7621pcs Stock]
- 1 pcs$5.40739
- Part Number:
- TSM60NB041PW C1G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET N-CHANNEL 600V 78A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM60NB041PW C1G electronic components. TSM60NB041PW C1G can be shipped within 24 hours after order. If you have any demands for TSM60NB041PW C1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB041PW C1G Product Attributes
Part Number :
TSM60NB041PW C1G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CHANNEL 600V 78A TO247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
41 mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
139nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6120pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
446W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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