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  5. CTLDM8120-M621H TR

Central Semiconductor Corp - CTLDM8120-M621H TR

KEY Part #: K6400439

[3396pcs Stock]

    Part Number:
    CTLDM8120-M621H TR
    Manufacturer:
    Central Semiconductor Corp
    Detailed description:
    MOSFET P-CH 20V DFN6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Thyristors - SCRs, Diodes - Rectifiers - Single, Thyristors - TRIACs, Thyristors - SCRs - Modules and Diodes - Zener - Arrays ...
    Competitive Advantage:
    We specialize in Central Semiconductor Corp CTLDM8120-M621H TR electronic components. CTLDM8120-M621H TR can be shipped within 24 hours after order. If you have any demands for CTLDM8120-M621H TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    CTLDM8120-M621H TR Product Attributes

    Part Number : CTLDM8120-M621H TR
    Manufacturer : Central Semiconductor Corp
    Description : MOSFET P-CH 20V DFN6
    Series : -
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 950mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 150 mOhm @ 950mA, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 3.56nC @ 4.5V
    Vgs (Max) : 8V
    Input Capacitance (Ciss) (Max) @ Vds : 200pF @ 16V
    FET Feature : -
    Power Dissipation (Max) : 1.6W (Ta)
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : TLM621H
    Package / Case : 6-XFDFN Exposed Pad
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