Rohm Semiconductor - R6009KNJTL

KEY Part #: K6394251

R6009KNJTL Pricing (USD) [117267pcs Stock]

  • 1 pcs$0.34869
  • 1,000 pcs$0.34695

Part Number:
R6009KNJTL
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET N-CHANNEL 600V 9A TO263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Rohm Semiconductor R6009KNJTL electronic components. R6009KNJTL can be shipped within 24 hours after order. If you have any demands for R6009KNJTL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

R6009KNJTL Product Attributes

Part Number : R6009KNJTL
Manufacturer : Rohm Semiconductor
Description : MOSFET N-CHANNEL 600V 9A TO263
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 535 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V
FET Feature : -
Power Dissipation (Max) : 94W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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