R6030ENZ1C9 Pricing (USD) [16611pcs Stock]
- 1 pcs$2.72793
- 10 pcs$2.43619
- 100 pcs$1.99752
- 500 pcs$1.61748
- 1,000 pcs$1.36414
- Part Number:
- R6030ENZ1C9
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 600V 30A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor R6030ENZ1C9 electronic components. R6030ENZ1C9 can be shipped within 24 hours after order. If you have any demands for R6030ENZ1C9, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6030ENZ1C9 Product Attributes
Part Number :
R6030ENZ1C9
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 600V 30A TO247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
120W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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