Toshiba Semiconductor and Storage - HN4B01JE(TE85L,F)

KEY Part #: K6391264

HN4B01JE(TE85L,F) Pricing (USD) [1309823pcs Stock]

  • 1 pcs$0.02824

Part Number:
HN4B01JE(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS NPN/PNP 50V 0.15A ESV PLN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Transistors - JFETs, Diodes - Zener - Single, Diodes - Bridge Rectifiers and Power Driver Modules ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN4B01JE(TE85L,F) Product Attributes

Part Number : HN4B01JE(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS NPN/PNP 50V 0.15A ESV PLN
Series : -
Part Status : Active
Transistor Type : NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10MA, 100MA
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-553
Supplier Device Package : ESV

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