Diodes Incorporated - DMN1260UFA-7B

KEY Part #: K6393769

DMN1260UFA-7B Pricing (USD) [1445909pcs Stock]

  • 1 pcs$0.02558
  • 10,000 pcs$0.02297

Part Number:
DMN1260UFA-7B
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 12V 0.5A X2DFN-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Diodes - RF, Transistors - Special Purpose, Diodes - Bridge Rectifiers and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN1260UFA-7B electronic components. DMN1260UFA-7B can be shipped within 24 hours after order. If you have any demands for DMN1260UFA-7B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN1260UFA-7B Product Attributes

Part Number : DMN1260UFA-7B
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 12V 0.5A X2DFN-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 366 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.96nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 10V
FET Feature : -
Power Dissipation (Max) : 360mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : X2-DFN0806-3
Package / Case : 3-XFDFN