Nexperia USA Inc. - PSMN4R3-80PS,127

KEY Part #: K6404010

PSMN4R3-80PS,127 Pricing (USD) [29974pcs Stock]

  • 1 pcs$1.37498
  • 10 pcs$1.24057
  • 100 pcs$0.94591
  • 500 pcs$0.73571
  • 1,000 pcs$0.60959

Part Number:
PSMN4R3-80PS,127
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 80V 120A TO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Thyristors - SCRs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PSMN4R3-80PS,127 electronic components. PSMN4R3-80PS,127 can be shipped within 24 hours after order. If you have any demands for PSMN4R3-80PS,127, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN4R3-80PS,127 Product Attributes

Part Number : PSMN4R3-80PS,127
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 80V 120A TO220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8161pF @ 40V
FET Feature : -
Power Dissipation (Max) : 306W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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