CSD19536KTT Pricing (USD) [32303pcs Stock]
- 1 pcs$1.40074
- 500 pcs$1.39378
- 1,000 pcs$1.17547
- Part Number:
- CSD19536KTT
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 100V 200A TO263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD19536KTT electronic components. CSD19536KTT can be shipped within 24 hours after order. If you have any demands for CSD19536KTT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19536KTT Product Attributes
Part Number :
CSD19536KTT
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 100V 200A TO263
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
153nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DDPAK/TO-263-3
Package / Case :
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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