CSD17575Q3T Pricing (USD) [122185pcs Stock]
- 1 pcs$0.34218
- 250 pcs$0.34048
- 500 pcs$0.30088
- 750 pcs$0.26288
- 1,250 pcs$0.23754
- Part Number:
- CSD17575Q3T
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 30V 60A 8VSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD17575Q3T electronic components. CSD17575Q3T can be shipped within 24 hours after order. If you have any demands for CSD17575Q3T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD17575Q3T Product Attributes
Part Number :
CSD17575Q3T
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 30V 60A 8VSON
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4420pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 108W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-VSON-CLIP (3.3x3.3)
Package / Case :
8-PowerTDFN
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