Toshiba Semiconductor and Storage - 2SK2231(TE16R1,NQ)

KEY Part #: K6410016

[82pcs Stock]


    Part Number:
    2SK2231(TE16R1,NQ)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET N-CH 60V 5A PW-MOLD.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Diodes - Bridge Rectifiers ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage 2SK2231(TE16R1,NQ) electronic components. 2SK2231(TE16R1,NQ) can be shipped within 24 hours after order. If you have any demands for 2SK2231(TE16R1,NQ), Please submit a Request for Quotation here or send us an email:
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    ISO-13485
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    ISO-45001-2018

    2SK2231(TE16R1,NQ) Product Attributes

    Part Number : 2SK2231(TE16R1,NQ)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET N-CH 60V 5A PW-MOLD
    Series : -
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
    Rds On (Max) @ Id, Vgs : 160 mOhm @ 2.5A, 10V
    Vgs(th) (Max) @ Id : 2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 370pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 20W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PW-MOLD
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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