Vishay Semiconductor Diodes Division - ES07B-GS18

KEY Part #: K6454600

ES07B-GS18 Pricing (USD) [921392pcs Stock]

  • 1 pcs$0.04236
  • 10,000 pcs$0.04215
  • 30,000 pcs$0.03876

Part Number:
ES07B-GS18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single and Diodes - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ES07B-GS18 electronic components. ES07B-GS18 can be shipped within 24 hours after order. If you have any demands for ES07B-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES07B-GS18 Product Attributes

Part Number : ES07B-GS18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1.2A DO219AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1.2A
Voltage - Forward (Vf) (Max) @ If : 980mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 4pF @ 4V, 50MHz
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -55°C ~ 150°C

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