Vishay Semiconductor Diodes Division - 1N4150W-E3-18

KEY Part #: K6454631

1N4150W-E3-18 Pricing (USD) [2895399pcs Stock]

1 pcs$0.01348
10,000 pcs$0.01342
30,000 pcs$0.01262
50,000 pcs$0.01184
100,000 pcs$0.01052

Part Number:: 1N4150W-E3-18

Manufacturer:: Vishay Semiconductor Diodes Division

Detailed description:: DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - JFETs and Transistors - IGBTs - Arrays ...

Competitive Advantage:: We specialize in Vishay Semiconductor Diodes Division 1N4150W-E3-18 electronic components. 1N4150W-E3-18 can be shipped within 24 hours after order. If you have any demands for 1N4150W-E3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

1N4150W-E3-18 Product Attributes

Part Number : 1N4150W-E3-18

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 50V 200MA SOD123

Series : -

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 50V

Current - Average Rectified (Io) : 200mA

Voltage - Forward (Vf) (Max) @ If : 1V @ 200mA

Speed : Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr) : 4ns

Current - Reverse Leakage @ Vr : 100nA @ 50V

Capacitance @ Vr, F : 2.5pF @ 0V, 1MHz

Mounting Type : Surface Mount

Package / Case : SOD-123

Supplier Device Package : SOD-123

Operating Temperature - Junction : -55°C ~ 150°C

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