EPC2012C Pricing (USD) [78588pcs Stock]
- 1 pcs$0.56967
- 1,000 pcs$0.56684
- Part Number:
- EPC2012C
- Manufacturer:
- EPC
- Detailed description:
- GANFET TRANS 200V 5A BUMPED DIE.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in EPC EPC2012C electronic components. EPC2012C can be shipped within 24 hours after order. If you have any demands for EPC2012C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2012C Product Attributes
Part Number :
EPC2012C
Manufacturer :
EPC
Description :
GANFET TRANS 200V 5A BUMPED DIE
Series :
eGaN®
Part Status :
Active
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
1.3nC @ 5V
Vgs (Max) :
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die Outline (4-Solder Bar)
Package / Case :
Die
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