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  5. DN3135N8-G

Microchip Technology - DN3135N8-G

KEY Part #: K6415992

DN3135N8-G Pricing (USD) [196530pcs Stock]

  • 1 pcs$0.19282
  • 2,000 pcs$0.19186
Part Number:
DN3135N8-G
Manufacturer:
Microchip Technology
Detailed description:
MOSFET N-CH 350V 0.135A SOT89-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Diodes - RF ...
Competitive Advantage:
We specialize in Microchip Technology DN3135N8-G electronic components. DN3135N8-G can be shipped within 24 hours after order. If you have any demands for DN3135N8-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DN3135N8-G Product Attributes

Part Number : DN3135N8-G
Manufacturer : Microchip Technology
Description : MOSFET N-CH 350V 0.135A SOT89-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 350V
Current - Continuous Drain (Id) @ 25°C : 135mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 0V
Rds On (Max) @ Id, Vgs : 35 Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 1.3W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
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