Toshiba Semiconductor and Storage - RN1107,LF(CT

KEY Part #: K6527462

RN1107,LF(CT Pricing (USD) [2581325pcs Stock]

  • 1 pcs$0.01440
  • 3,000 pcs$0.01433
  • 6,000 pcs$0.01246
  • 15,000 pcs$0.01059
  • 30,000 pcs$0.00997
  • 75,000 pcs$0.00935
  • 150,000 pcs$0.00831

Part Number:
RN1107,LF(CT
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PREBIAS NPN 0.1W SSM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1107,LF(CT electronic components. RN1107,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1107,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1107,LF(CT Product Attributes

Part Number : RN1107,LF(CT
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 0.1W SSM
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM

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