IXFH6N100F Pricing (USD) [10590pcs Stock]
- 1 pcs$4.90940
- 10 pcs$4.41758
- 100 pcs$3.63216
- 500 pcs$3.04315
- Part Number:
- IXFH6N100F
- Manufacturer:
- IXYS-RF
- Detailed description:
- MOSFET N-CH 1000V 6A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS-RF IXFH6N100F electronic components. IXFH6N100F can be shipped within 24 hours after order. If you have any demands for IXFH6N100F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH6N100F Product Attributes
Part Number :
IXFH6N100F
Manufacturer :
IXYS-RF
Description :
MOSFET N-CH 1000V 6A TO247
Series :
HiPerRF™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1770pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
180W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXFH)
Package / Case :
TO-247-3
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