Nexperia USA Inc. - PSMN057-200B,118

KEY Part #: K6402963

PSMN057-200B,118 Pricing (USD) [89861pcs Stock]

  • 1 pcs$0.87801
  • 10 pcs$0.79439
  • 100 pcs$0.63823

Part Number:
PSMN057-200B,118
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 200V 39A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PSMN057-200B,118 electronic components. PSMN057-200B,118 can be shipped within 24 hours after order. If you have any demands for PSMN057-200B,118, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN057-200B,118 Product Attributes

Part Number : PSMN057-200B,118
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 200V 39A D2PAK
Series : TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 57 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 96nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3750pF @ 25V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB