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  5. IXFH12N100F

IXYS-RF - IXFH12N100F

KEY Part #: K6393664

IXFH12N100F Pricing (USD) [10296pcs Stock]

  • 1 pcs$4.00229
Part Number:
IXFH12N100F
Manufacturer:
IXYS-RF
Detailed description:
MOSFET N-CH 1000V 12A TO-247AD.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in IXYS-RF IXFH12N100F electronic components. IXFH12N100F can be shipped within 24 hours after order. If you have any demands for IXFH12N100F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH12N100F Product Attributes

Part Number : IXFH12N100F
Manufacturer : IXYS-RF
Description : MOSFET N-CH 1000V 12A TO-247AD
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AD (IXFH)
Package / Case : TO-3P-3 Full Pack

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