Vishay Semiconductor Diodes Division - VS-GT100TP120N

KEY Part #: K6533609

[776pcs Stock]


    Part Number:
    VS-GT100TP120N
    Manufacturer:
    Vishay Semiconductor Diodes Division
    Detailed description:
    IGBT 1200V 180A 652W INT-A-PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Power Driver Modules, Thyristors - TRIACs, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in Vishay Semiconductor Diodes Division VS-GT100TP120N electronic components. VS-GT100TP120N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP120N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GT100TP120N Product Attributes

    Part Number : VS-GT100TP120N
    Manufacturer : Vishay Semiconductor Diodes Division
    Description : IGBT 1200V 180A 652W INT-A-PAK
    Series : -
    Part Status : Obsolete
    IGBT Type : Trench
    Configuration : Half Bridge
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 180A
    Power - Max : 652W
    Vce(on) (Max) @ Vge, Ic : 2.35V @ 15V, 100A
    Current - Collector Cutoff (Max) : 5mA
    Input Capacitance (Cies) @ Vce : 12.8nF @ 30V
    Input : Standard
    NTC Thermistor : No
    Operating Temperature : 175°C (TJ)
    Mounting Type : Chassis Mount
    Package / Case : INT-A-PAK (3 + 4)
    Supplier Device Package : INT-A-PAK

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