Part Number :
VS-GT100TP120N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 1200V 180A 652W INT-A-PAK
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
180A
Vce(on) (Max) @ Vge, Ic :
2.35V @ 15V, 100A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
12.8nF @ 30V
Operating Temperature :
175°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
INT-A-PAK (3 + 4)
Supplier Device Package :
INT-A-PAK