Infineon Technologies - BSM100GB120DN2HOSA1

KEY Part #: K6534410

BSM100GB120DN2HOSA1 Pricing (USD) [661pcs Stock]

  • 1 pcs$70.14498

Part Number:
BSM100GB120DN2HOSA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT 2 MED POWER 62MM-1.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies BSM100GB120DN2HOSA1 electronic components. BSM100GB120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM100GB120DN2HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM100GB120DN2HOSA1 Product Attributes

Part Number : BSM100GB120DN2HOSA1
Manufacturer : Infineon Technologies
Description : IGBT 2 MED POWER 62MM-1
Series : -
Part Status : Not For New Designs
IGBT Type : -
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 150A
Power - Max : 800W
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 100A
Current - Collector Cutoff (Max) : 2mA
Input Capacitance (Cies) @ Vce : 6.5nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

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