IXFJ20N85X Pricing (USD) [10022pcs Stock]
- 1 pcs$4.52158
- 10 pcs$4.06854
- 100 pcs$3.34518
- 500 pcs$2.80270
- Part Number:
- IXFJ20N85X
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 850V 9.5A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Transistors - Special Purpose and Diodes - RF ...
- Competitive Advantage:
- We specialize in IXYS IXFJ20N85X electronic components. IXFJ20N85X can be shipped within 24 hours after order. If you have any demands for IXFJ20N85X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFJ20N85X Product Attributes
Part Number :
IXFJ20N85X
Manufacturer :
IXYS
Description :
MOSFET N-CH 850V 9.5A TO247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
850V
Current - Continuous Drain (Id) @ 25°C :
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1660pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ISO TO-247-3
Package / Case :
TO-247-3
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