[13343pcs Stock]
- Part Number:
- NP80N04PUG-E1B-AY
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 40V 80A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Renesas Electronics America NP80N04PUG-E1B-AY electronic components. NP80N04PUG-E1B-AY can be shipped within 24 hours after order. If you have any demands for NP80N04PUG-E1B-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP80N04PUG-E1B-AY Product Attributes
Part Number :
NP80N04PUG-E1B-AY
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 40V 80A TO-263
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
135nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.8W (Ta), 115W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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