IXTX110N20L2 Pricing (USD) [3666pcs Stock]
- 1 pcs$12.99556
- 10 pcs$12.02078
- 100 pcs$10.26650
- Part Number:
- IXTX110N20L2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 200V 110A PLUS247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXTX110N20L2 electronic components. IXTX110N20L2 can be shipped within 24 hours after order. If you have any demands for IXTX110N20L2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX110N20L2 Product Attributes
Part Number :
IXTX110N20L2
Manufacturer :
IXYS
Description :
MOSFET N-CH 200V 110A PLUS247
Series :
Linear L2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
500nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
960W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS247™-3
Package / Case :
TO-247-3
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