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  5. GA10JT12-263

GeneSiC Semiconductor - GA10JT12-263

KEY Part #: K6399113

GA10JT12-263 Pricing (USD) [4640pcs Stock]

  • 1 pcs$10.16943
  • 10 pcs$9.24469
  • 25 pcs$8.55122
  • 100 pcs$7.47449
  • 250 pcs$6.81498
Part Number:
GA10JT12-263
Manufacturer:
GeneSiC Semiconductor
Detailed description:
TRANS SJT 1200V 25A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Diodes - Zener - Arrays and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor GA10JT12-263 electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA10JT12-263 Product Attributes

Part Number : GA10JT12-263
Manufacturer : GeneSiC Semiconductor
Description : TRANS SJT 1200V 25A
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 120 mOhm @ 10A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : -
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