Toshiba Semiconductor and Storage - TK65G10N1,RQ

KEY Part #: K6402060

TK65G10N1,RQ Pricing (USD) [71903pcs Stock]

  • 1 pcs$0.60117
  • 1,000 pcs$0.59818

Part Number:
TK65G10N1,RQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 100V 65A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK65G10N1,RQ electronic components. TK65G10N1,RQ can be shipped within 24 hours after order. If you have any demands for TK65G10N1,RQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK65G10N1,RQ Product Attributes

Part Number : TK65G10N1,RQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 100V 65A D2PAK
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5400pF @ 50V
FET Feature : -
Power Dissipation (Max) : 156W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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