GeneSiC Semiconductor - 1N8030-GA

KEY Part #: K6428136

1N8030-GA Pricing (USD) [488pcs Stock]

1 pcs$89.56064
10 pcs$85.23848
25 pcs$82.15037

Part Number:: 1N8030-GA

Manufacturer:: GeneSiC Semiconductor

Detailed description:: DIODE SCHOTTKY 650V 750MA TO257.

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - RF, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules and Transistors - FETs, MOSFETs - Single ...

Competitive Advantage:: We specialize in GeneSiC Semiconductor 1N8030-GA electronic components. 1N8030-GA can be shipped within 24 hours after order. If you have any demands for 1N8030-GA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

1N8030-GA Product Attributes

Part Number : 1N8030-GA

Manufacturer : GeneSiC Semiconductor

Description : DIODE SCHOTTKY 650V 750MA TO257

Series : -

Part Status : Obsolete

Diode Type : Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max) : 650V

Current - Average Rectified (Io) : 750mA

Voltage - Forward (Vf) (Max) @ If : 1.39V @ 750mA

Speed : No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr) : 0ns

Current - Reverse Leakage @ Vr : 5µA @ 650V

Capacitance @ Vr, F : 76pF @ 1V, 1MHz

Mounting Type : Through Hole

Package / Case : TO-257-3

Supplier Device Package : TO-257

Operating Temperature - Junction : -55°C ~ 250°C

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