EPC - EPC8009

KEY Part #: K6403216

EPC8009 Pricing (USD) [37110pcs Stock]

  • 1 pcs$1.10653
  • 2,500 pcs$1.10102

Part Number:
EPC8009
Manufacturer:
EPC
Detailed description:
GANFET TRANS 65V 2.7A BUMPED DIE.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in EPC EPC8009 electronic components. EPC8009 can be shipped within 24 hours after order. If you have any demands for EPC8009, Please submit a Request for Quotation here or send us an email:
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EPC8009 Product Attributes

Part Number : EPC8009
Manufacturer : EPC
Description : GANFET TRANS 65V 2.7A BUMPED DIE
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 65V
Current - Continuous Drain (Id) @ 25°C : 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.45nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 52pF @ 32.5V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die