[9435pcs Stock]
- Part Number:
- GT60N321(Q)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- IGBT 1000V 60A 170W TO3P LH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage GT60N321(Q) electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT60N321(Q) Product Attributes
Part Number :
GT60N321(Q)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
IGBT 1000V 60A 170W TO3P LH
Series :
-
Part Status :
Obsolete
IGBT Type :
-
Voltage - Collector Emitter Breakdown (Max) :
1000V
Current - Collector (Ic) (Max) :
60A
Current - Collector Pulsed (Icm) :
120A
Vce(on) (Max) @ Vge, Ic :
2.8V @ 15V, 60A
Power - Max :
170W
Switching Energy :
-
Input Type :
Standard
Gate Charge :
-
Td (on/off) @ 25°C :
330ns/700ns
Test Condition :
-
Reverse Recovery Time (trr) :
2.5µs
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-3PL
Supplier Device Package :
TO-3P(LH)
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