Toshiba Semiconductor and Storage - GT10J312(Q)

KEY Part #: K6424069

[9435pcs Stock]


    Part Number:
    GT10J312(Q)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    IGBT 600V 10A 60W TO220SM.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage GT10J312(Q) electronic components. GT10J312(Q) can be shipped within 24 hours after order. If you have any demands for GT10J312(Q), Please submit a Request for Quotation here or send us an email:
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    GT10J312(Q) Product Attributes

    Part Number : GT10J312(Q)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : IGBT 600V 10A 60W TO220SM
    Series : -
    Part Status : Obsolete
    IGBT Type : -
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 10A
    Current - Collector Pulsed (Icm) : 20A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
    Power - Max : 60W
    Switching Energy : -
    Input Type : Standard
    Gate Charge : -
    Td (on/off) @ 25°C : 400ns/400ns
    Test Condition : 300V, 10A, 100 Ohm, 15V
    Reverse Recovery Time (trr) : 200ns
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package : TO-220SM