IXFH12N50F Pricing (USD) [10590pcs Stock]
- 1 pcs$5.15178
- 10 pcs$4.63572
- 100 pcs$3.81153
- 500 pcs$3.19343
- Part Number:
- IXFH12N50F
- Manufacturer:
- IXYS-RF
- Detailed description:
- MOSFET N-CH 500V 12A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Thyristors - TRIACs and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in IXYS-RF IXFH12N50F electronic components. IXFH12N50F can be shipped within 24 hours after order. If you have any demands for IXFH12N50F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH12N50F Product Attributes
Part Number :
IXFH12N50F
Manufacturer :
IXYS-RF
Description :
MOSFET N-CH 500V 12A TO247
Series :
HiPerRF™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1870pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
180W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXFH)
Package / Case :
TO-247-3
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