Transphorm - TPH3208LSG

KEY Part #: K6398313

TPH3208LSG Pricing (USD) [8238pcs Stock]

  • 1 pcs$5.00194

Part Number:
TPH3208LSG
Manufacturer:
Transphorm
Detailed description:
GANFET N-CH 650V 20A 3PQFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Transphorm TPH3208LSG electronic components. TPH3208LSG can be shipped within 24 hours after order. If you have any demands for TPH3208LSG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH3208LSG Product Attributes

Part Number : TPH3208LSG
Manufacturer : Transphorm
Description : GANFET N-CH 650V 20A 3PQFN
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 14A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-PQFN (8x8)
Package / Case : 3-PowerDFN