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Microsemi Corporation - APTM120DA30T1G

KEY Part #: K6396577

APTM120DA30T1G Pricing (USD) [2343pcs Stock]

  • 1 pcs$18.48678
  • 100 pcs$18.26704
Part Number:
APTM120DA30T1G
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET N-CH 1200V 31A SP1.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Transistors - JFETs ...
Competitive Advantage:
We specialize in Microsemi Corporation APTM120DA30T1G electronic components. APTM120DA30T1G can be shipped within 24 hours after order. If you have any demands for APTM120DA30T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120DA30T1G Product Attributes

Part Number : APTM120DA30T1G
Manufacturer : Microsemi Corporation
Description : MOSFET N-CH 1200V 31A SP1
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 560nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 14560pF @ 25V
FET Feature : -
Power Dissipation (Max) : 657W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SP1
Package / Case : SP1

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