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  5. EPC2010C

EPC - EPC2010C

KEY Part #: K6416785

EPC2010C Pricing (USD) [25038pcs Stock]

  • 1 pcs$1.81967
  • 500 pcs$1.81062
Part Number:
EPC2010C
Manufacturer:
EPC
Detailed description:
GANFET TRANS 200V 22A BUMPED DIE.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Diodes - Zener - Single, Thyristors - DIACs, SIDACs and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in EPC EPC2010C electronic components. EPC2010C can be shipped within 24 hours after order. If you have any demands for EPC2010C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2010C Product Attributes

Part Number : EPC2010C
Manufacturer : EPC
Description : GANFET TRANS 200V 22A BUMPED DIE
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 12A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 5.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (7-Solder Bar)
Package / Case : Die
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