IXFH22N65X2 Pricing (USD) [23616pcs Stock]
- 1 pcs$2.38859
- 10 pcs$2.13299
- 100 pcs$1.74905
- 500 pcs$1.41630
- 1,000 pcs$1.19447
- Part Number:
- IXFH22N65X2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 650V 22A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in IXYS IXFH22N65X2 electronic components. IXFH22N65X2 can be shipped within 24 hours after order. If you have any demands for IXFH22N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH22N65X2 Product Attributes
Part Number :
IXFH22N65X2
Manufacturer :
IXYS
Description :
MOSFET N-CH 650V 22A TO-247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2310pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
390W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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