TJ60S06M3L(T6L1,NQ Pricing (USD) [102769pcs Stock]
- 1 pcs$0.40559
- 2,000 pcs$0.40357
- Part Number:
- TJ60S06M3L(T6L1,NQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 60V 60A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ electronic components. TJ60S06M3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TJ60S06M3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ60S06M3L(T6L1,NQ Product Attributes
Part Number :
TJ60S06M3L(T6L1,NQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 60V 60A DPAK-3
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
11.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
156nC @ 10V
Vgs (Max) :
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds :
7760pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
100W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK+
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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