AOB11S65L Pricing (USD) [71474pcs Stock]
- 1 pcs$0.54706
- 800 pcs$0.51956
- Part Number:
- AOB11S65L
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Detailed description:
- MOSFET N-CH 650V 11A TO263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Alpha & Omega Semiconductor Inc. AOB11S65L electronic components. AOB11S65L can be shipped within 24 hours after order. If you have any demands for AOB11S65L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AOB11S65L Product Attributes
Part Number :
AOB11S65L
Manufacturer :
Alpha & Omega Semiconductor Inc.
Description :
MOSFET N-CH 650V 11A TO263
Series :
aMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
399 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
646pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
198W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (D²Pak)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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