Diodes Incorporated - DDTB113ZC-7-F

KEY Part #: K6526466

DDTB113ZC-7-F Pricing (USD) [1903162pcs Stock]

  • 1 pcs$0.01943
  • 3,000 pcs$0.01801
  • 6,000 pcs$0.01566
  • 15,000 pcs$0.01331
  • 30,000 pcs$0.01253
  • 75,000 pcs$0.01175
  • 150,000 pcs$0.01018

Part Number:
DDTB113ZC-7-F
Manufacturer:
Diodes Incorporated
Detailed description:
TRANS PREBIAS PNP 200MW SOT23-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DDTB113ZC-7-F electronic components. DDTB113ZC-7-F can be shipped within 24 hours after order. If you have any demands for DDTB113ZC-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTB113ZC-7-F Product Attributes

Part Number : DDTB113ZC-7-F
Manufacturer : Diodes Incorporated
Description : TRANS PREBIAS PNP 200MW SOT23-3
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23-3

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