Toshiba Semiconductor and Storage - HN1C01FYTE85LF

KEY Part #: K6391740

HN1C01FYTE85LF Pricing (USD) [1484466pcs Stock]

  • 1 pcs$0.02504
  • 3,000 pcs$0.02492

Part Number:
HN1C01FYTE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS 2NPN 50V 0.15A SM6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage HN1C01FYTE85LF electronic components. HN1C01FYTE85LF can be shipped within 24 hours after order. If you have any demands for HN1C01FYTE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1C01FYTE85LF Product Attributes

Part Number : HN1C01FYTE85LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2NPN 50V 0.15A SM6
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6

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