APT34N80B2C3G Pricing (USD) [8189pcs Stock]
- 1 pcs$5.53519
- 10 pcs$5.03368
- 100 pcs$4.27862
- 500 pcs$3.64940
- Part Number:
- APT34N80B2C3G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 800V 34A T-MAX.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT34N80B2C3G electronic components. APT34N80B2C3G can be shipped within 24 hours after order. If you have any demands for APT34N80B2C3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT34N80B2C3G Product Attributes
Part Number :
APT34N80B2C3G
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 800V 34A T-MAX
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
145 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs :
355nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4510pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
417W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
T-MAX™ [B2]
Package / Case :
TO-247-3 Variant
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