Vishay Semiconductor Diodes Division - BAS33-TAP

KEY Part #: K6439517

BAS33-TAP Pricing (USD) [2457210pcs Stock]

  • 1 pcs$0.01505
  • 50,000 pcs$0.01370

Part Number:
BAS33-TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 30V 200MA DO35. Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAS33-TAP electronic components. BAS33-TAP can be shipped within 24 hours after order. If you have any demands for BAS33-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS33-TAP Product Attributes

Part Number : BAS33-TAP
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 30V 200MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 1nA @ 15V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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