[663pcs Stock]
- Part Number:
- SIDC09D60E6YX1SA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 600V 20A WAFER.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Diodes - Rectifiers - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies SIDC09D60E6YX1SA1 electronic components. SIDC09D60E6YX1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC09D60E6YX1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC09D60E6YX1SA1 Product Attributes
Part Number :
SIDC09D60E6YX1SA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 600V 20A WAFER
Series :
-
Part Status :
Discontinued at Digi-Key
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
20A (DC)
Voltage - Forward (Vf) (Max) @ If :
1.7V @ 20A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
150ns
Current - Reverse Leakage @ Vr :
27µA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
Die
Supplier Device Package :
Sawn on foil
Operating Temperature - Junction :
-55°C ~ 150°C
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