Vishay Siliconix - SI8900EDB-T2-E1

KEY Part #: K6522066

SI8900EDB-T2-E1 Pricing (USD) [54394pcs Stock]

  • 1 pcs$0.71884
  • 3,000 pcs$0.67285

Part Number:
SI8900EDB-T2-E1
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 20V 5.4A 10-MFP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Transistors - JFETs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Vishay Siliconix SI8900EDB-T2-E1 electronic components. SI8900EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8900EDB-T2-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8900EDB-T2-E1 Product Attributes

Part Number : SI8900EDB-T2-E1
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 20V 5.4A 10-MFP
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Drain
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.4A
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 10-UFBGA, CSPBGA
Supplier Device Package : 10-Micro Foot™ CSP (2x5)