IRF1010NPBF Pricing (USD) [55666pcs Stock]
- 1 pcs$0.74422
- 10 pcs$0.65851
- 100 pcs$0.52058
- 500 pcs$0.40371
- 1,000 pcs$0.30149
- Part Number:
- IRF1010NPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 55V 85A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF1010NPBF electronic components. IRF1010NPBF can be shipped within 24 hours after order. If you have any demands for IRF1010NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1010NPBF Product Attributes
Part Number :
IRF1010NPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 55V 85A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 43A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3210pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
180W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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